Difference between revisions of "User talk:Kaylee"

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and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.  
 
and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.  
 
Thank you !
 
Thank you !
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== IC business  ==
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Are you  doing IC business ? If you do it ,
 +
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this website you must to know, because I do ic too,
 +
 +
I feel that this site is really very useful,
 +
 +
http://www.ChinaICmart.com

Revision as of 19:09, 16 July 2008

Hi,everybody, I have some infromation about LCA100、LCA1002416 and LCA10049 ,hopeing to help somebady who need it .And the infromantion come from Chinaicmart.com,a very good site. Description of LCA100 LCA1002416 LCA10049

http://www.chinaicmart.com/series-LCA/LCA100.html

LCA100 is a 350V, 120mA, 25Ω 1-Form-A relay. It features the lowest on-resistance in an OptoMOS relay with 350V peak load voltage. Current limiting version is also available. (“L” suffix). Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this data sheet is not implied.Exposure of the device to the absolute maximum ratings for an extended period may degrade the device and effect its reliability. Thanks!

BLF543 DATASHEET AND PDF

Hi,everybody, I'm so happy to see you again.

BLF543 DATASHEET

http://www.chinaicmart.com/series-BLF/BLF543.html

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices are marked with a VGS indication intended for matched pair applications.

Thank you !

DESCRIPTION of NEZ4450-15D and NEZ4450-3B

Hi,everyone, First,I want say thank you . second,I have some information to share with you

DESCRIPTION of NEZ4450-15D and NEZ4450-3B

http://www.chinaicmart.com/series-NEZ/NEZ4450-15D.html


The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s strigent quality assurance and test procedures guarantee the highest reliability and performance.

The M/A-COM SW-488 Datasheet and pdf

HI,everyone, The M/A-COM SW-488 Datasheet and pdf

http://www.chinaicmart.com/series-SW-/SW-488SMB.html

The M/A-COM SW-488 is a GaAs monolithic switch in a low cost, FQFP-N, surface mount plastic package. The SW-488 is ideally suited for applications where very low power consumption, high power handling, and low cost are required. The SW-488 includes an integrated decoder. The switch offers GSM power handling with below +2.5V control voltage. The supply voltage VDD should be connected to the highest available voltage. The SW-488 is fabricated using a new 0.5 -micron gate length GaAs pHEMT process. The process features full chip passivation for increased performance and reliability. This switch is designed for Dual Mode WCDMA/GSM/DCS handsets where the phone needs to be able to simultaneously receive a WCDMA and GSM signal. thank you !

A good website

I work in the ic industry, sometimes,I encounter some difficult issues. http://www.chinaicmart.com, this website very useful, it can solve many problems. it is really a very useful website.

ISL9005IRRZ-T Datasheet and PDF

Hi,everybody, To share with you ! ISL9005IRRZ-T Datasheet and PDF

http://www.chinaicmart.com/series-ISL/ISL9005IRRZ-T.html

ISL9011 is a high performance dual LDO capable of sourcing 150mA current from channel 1 and 300mA from channel 2. The device has a low standby current and highPSRR and is stable with output capacitance of 1µF to 10µF with ESR of up to 200mΩ. A reference bypass pin allows an external capacitor for adjusting a noise filter for low noise and high PSRR applications. The quiescent current is typically only 45µA with both LDO’s enabled and active. Separate enable pins control each individual LDO output. When both enable pins are low, the device is in shutdown, typically drawing less than 0.1µA. Several combinations of voltage outputs are standard. Others are available on request. Output voltage options for each LDO range from 1.2V to 3.6V. Thank you!

HX6356-BNT Datasheet and PDF

Hi, very gald to see you! Who want to know the information about HX6356-BNT? I have some.

HX6356-BNT Datasheet and PDF

http://www.chinaicmart.com/series-HX6/HX6356-BNT.html

The HX6356-BNT Radiation Hardened Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in harsh, transient radiation environments. The RAM operates over the full military temperature range and requires only a single 5 V ±10% power supply. The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 15 mW/MHz in operation, and less than 5 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of 14 ns at 5V.Honeywell’s enhanced SOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques. The RICMOS™ IV process is a 5-volt, SIMOX CMOS technology with a 150 Å gate oxide and a minimum drawn feature size of 0.75 µm (0.6 µmeffective gate length—Leff). Additional features include tungsten via plugs, Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability. A 7 transistor(7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening. Thank you !

IC business

Are you doing IC business ? If you do it ,

this website you must to know, because I do ic too,

I feel that this site is really very useful,

http://www.ChinaICmart.com